Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors

Abbas, G. and Ding, Z. and Mallik, K. and Assender, H. and Taylor, D.M. (2013) Hysteresis-Free Vacuum-Processed Acrylate–Pentacene Thin-Film Transistors. IEEE Electron Device Letters, 34 ((2)). 268 - 270. DOI: 10.1109/LED.2012.2234434

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The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 μm to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m·min-1and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm2 V-1·s-1, a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 � 105. The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:45
Last Modified: 23 Sep 2015 03:08
ISSN: 0741-3106
URI: http://e.bangor.ac.uk/id/eprint/969
Identification Number: DOI: 10.1109/LED.2012.2234434
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