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Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

Sleiman, A. and Sayers, P.W. and Mabrook, M.F. (2013) Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures. Journal of Applied Physics, 113 ((16)). 164506 - 164506-5. DOI: 10.1063/1.4803062

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Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:44
Last Modified: 23 Sep 2015 03:07
ISSN: 0021-8979
URI: http://e.bangor.ac.uk/id/eprint/907
Identification Number: DOI: 10.1063/1.4803062
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