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Organic electronic memory based on a ferroelectric polymer

Kalbitz, R. and Frübing, P. and Gerhard, R. and Taylor, D.M. (2013) Organic electronic memory based on a ferroelectric polymer. Journal of Physics: Conference Series, 301 ((1)). 012055. DOI: 10.1088/1742-6596/301/1/012055

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Abstract

Measurements of the capacitance of metal-insulator-semiconductor capacitors and the output characteristics of thin film transistors based on poly(3-hexylthiophene) as the active semiconductor and poly(vinylidenefluoride-trifluoroethylene) as the gate insulator show that ferroelectric polarisation in the insulator is stable but that its effect when poled by depletion voltages is partially neutralised by trapping of electrons at or near the semiconductor interface. Nevertheless, the combination of materials is capable of providing an adequate memory function.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:43
Last Modified: 23 Sep 2015 03:07
ISSN: 1742-6588
URI: http://e.bangor.ac.uk/id/eprint/883
Identification Number: DOI: 10.1088/1742-6596/301/1/012055
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