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Effect of substrate on temperature range and power capacity of RF MEMS capacitive switches

Palego, C. and Solazzi, F. and Halder, S. and Hwang, J. and Farinelli, P. and Sorrentino, R. and Faes, A. and Mulloni, V. and Margesin, B. (2010) Effect of substrate on temperature range and power capacity of RF MEMS capacitive switches. In: European Microwave Conference (EuMC), Paris, September 2010.

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Abstract

A robust design of RF MEMS capacitive shunt switches was implemented with a movable gold membrane, separate and non-contacting actuation pads, and electrostatic actuation. The same design was fabricated on silicon and quartz substrates with different combinations of dielectric constant, resistivity, thermal conductivity, and thermal expansion coefficient. It was found that most switches could operate between 0°C and 60°C and handle hot switching up to at least 5.6 W. However, the pull-in voltage of the switches fabricated on quartz had stronger temperature and power dependence than that on silicon. This was attributed to greater thermal expansion mismatch, impedance mismatch and self-heating on quartz. These results show that the power-handling capacity of a switch is determined by not only its membrane design, but also its circuit environment.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 27 Jan 2016 03:36
Last Modified: 27 Jan 2016 03:36
URI: http://e.bangor.ac.uk/id/eprint/6163
Publisher: IEEE publishing
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