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High-power high-contrast RF MEMS capacitive switch

Solazzi, F. and Palego, C. and Molinero, D. and Farinelli, P. and Colpo, S. and Hwang, J.C.M. and Margesin, B. and Sorrentino, R. (2012) High-power high-contrast RF MEMS capacitive switch. In: 7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 October 2012.

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Abstract

This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 27 Jan 2016 03:36
Last Modified: 27 Jan 2016 03:36
URI: http://e.bangor.ac.uk/id/eprint/6157
Publisher: IEEE publishing
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