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Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

Avila-Niño, J.A. and Patchett, E.R. and Taylor, D.M. and Assender, H.E. and Yeates, S.G. and DIng, Z. and Morrison, J.J. (2016) Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process. Organic Electronics, 31. pp. 77-81. DOI: 10.1016/j.orgel.2016.01.017

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Abstract

An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho[2,3-b:2',3'-f] thieno[3,2-b]thiophene were deposited by thermal evaporation. The gate dielectric was deposited in a vacuum roll-to-roll environment at a web speed of 25 m/min by flash-evaporation and subsequent plasma polymerisation of tripropyleneglycol diacrylate (TPGDA). Buffering the TPGDA with a polystyrene layer yields hysteresis-free transistor characteristics with turn-on voltage close to zero. The static transfer characteristic of diode-connected load inverters were also hysteresis-free with maximum gain >2 and noise margin �2.5 V. When incorporated into SRAM cells the time-constant for writing data into individual SRAM cells was less than 0.4 ms. Little change occurred in the magnitude of the stored voltages, when the SRAM was powered continuously from a �40 V rail for over 27 h testifying to the electrical stability of the threshold voltage of the individual transistors. Unencapsulated SRAM cells measured two months after fabrication showed no significant degradation after storage in a clear plastic container in normal laboratory ambient.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 27 Jan 2016 03:36
Last Modified: 20 Jan 2017 03:14
ISSN: 1566-1199
URI: http://e.bangor.ac.uk/id/eprint/6141
Identification Number: DOI: 10.1016/j.orgel.2016.01.017
Publisher: Elsevier
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