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RF burn-in of dielectric-charging characteristics of micro-electromechanical capacitive switches

Molinero, D. and Palego, C. and Luo, X. and Hwang, J.C.M. and Goldsmith, C.L. (2012) RF burn-in of dielectric-charging characteristics of micro-electromechanical capacitive switches. In: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Montreal, 17-22 June 2012.

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Abstract

We report, for the first time, the benefit of RF burn-in at power levels significantly higher than the nominal handling capacity of micro-electromechanical capacitive switches. The benefit appears to be permanent, so that, after burn-in, the switches remain less vulnerable to dielectric charging and, presumably, more reliable. It was speculated that high RF power permanently changed the bond configuration of the silicon-dioxide dielectric, which prevented charge injection under DC bias. Obviously, more detailed study is needed to elucidate the detailed burn-in mechanism. However, this initial result is very encouraging and can facilitate the application of these switches in many RF systems.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 21 Jan 2016 03:15
Last Modified: 21 Jan 2016 03:15
ISSN: 0149-645X
URI: http://e.bangor.ac.uk/id/eprint/6120
Identification Number: DOI: 10.1109/MWSYM.2012.6257778
Publisher: IEEE publishing
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