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Intermodulation distortion in MEMS capacitive switches under high RF power

Molinero, D. and Luo, X. and Ning, Y. and Palego, C. and Hwang, J. and Goldsmith, C.L. (2013) Intermodulation distortion in MEMS capacitive switches under high RF power. In: IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, USA, June 2013.

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Abstract

ntermodulation distortion in MEMS capacitive switches was analyzed both theoretically and experimentally as a function of tone spacing and RF power. The theory and experiment consistently showed that, under high RF power, additional distortion was caused by self-heating of the switch membrane by the RF power, which decreased the membrane spring constant significantly. The results implied that, well before the input RF power triggers self-actuation, the distortion might increase rapidly to an unacceptable level, so that the power-handling capacity of MEMS capacitive switches would be limited by intermodulation distortion instead of self-actuation.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 21 Jan 2016 03:15
Last Modified: 27 Jan 2016 03:36
ISSN: 0149-645X
URI: http://e.bangor.ac.uk/id/eprint/6119
Identification Number: DOI: 10.1109/MWSYM.2013.6697357
Publisher: IEEE publishing
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