Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches

Molinero, D. and Luo, X. and Shen, C. and Palego, C. and Hwang, J.C.M. and Goldsmith, C.L. (2013) Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches. IEEE Transactions on Device and Materials Reliability, 13 (1). pp. 310-315. DOI: 10.1109/TDMR.2013.2246567

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This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 19 Jan 2016 03:20
Last Modified: 19 Jan 2016 03:20
ISSN: 1530-4388
URI: http://e.bangor.ac.uk/id/eprint/6091
Identification Number: DOI: 10.1109/TDMR.2013.2246567
Publisher: IEEE publishing
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