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Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing

Taylor, D.M. and Williams, A. and Patchett, E.R. and Abbas, G.A. and Ding, Z. and Assender, H.E. and Morrison, J.J. and Yeates, S.G. (2013) Simulating the Electrical Characteristics of Organic TFTs Prepared by Vacuum Processing. Journal of Display Technology, 9 ((11)). pp. 877-882. DOI: 10.1109/JDT.2013.2255023

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Abstract

An all-vacuum evaporated approach to the roll-to-roll (R2R) fabrication of organic electronic circuits is being developed for potential applications in, for example, display backplanes and integrated security tagging for packaging. As part of an on-going development process, we are now addressing the question of circuit design and simulation. Here we describe the first step in this process, namely the extraction of parameters from experimentally-obtained output and transfer characteristics of vacuum produced, thin film transistors based on the organic semiconductors pentacene and dinaphtho[2,3-b:2$'$3 $'$-f]thieno[3,2-b]thiophene (DNTT). For this we use Silvaco's Universal Thin Film Transistor (UOTFT) Model $({rm Level}=37)$ so that the extracted parameters may be used directly with Silvaco's Gateway circuit simulation software.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:37
Last Modified: 23 Sep 2015 03:02
ISSN: 1551-319X
URI: http://e.bangor.ac.uk/id/eprint/605
Identification Number: DOI: 10.1109/JDT.2013.2255023
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