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Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers

Satter, Z.A. and Shore, K.A. and Wang, Z. (2013) Wave-Guiding Analysis of Annular Core Geometry Metal-Clad Semiconductor Nano-Lasers. IEEE Journal of Quantum Electronics, 50 ((1)). pp. 15-22. DOI: 10.1109/JQE.2013.2291662

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Abstract

Numerical modeling of cylindrical semiconductor nano-lasers has been undertaken accommodating local gain variations in the active region of the device. Analysis is performed using both the cylindrical transfer matrix method and the finite element method. Calculations have thereby been performed of the modal gain and the lasing condition for the device. The model has been applied to annular active core structures and a comparison has been made of the requirements for achieving lasing via the excitation of TE01 and TM01 modes. For representative structures, it is shown that TE and TM mode lasing can be supported in devices having cavity lengths in the order of 1 and 60 μm, respectively.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:37
Last Modified: 07 Apr 2016 02:21
ISSN: 0018-9197
URI: http://e.bangor.ac.uk/id/eprint/587
Identification Number: DOI: 10.1109/JQE.2013.2291662
Publisher: IEEE publishing
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