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Single-walled nanotube MIS memory devices

Alba-Martin, M. and Firmager, T. and Atherton, J.J. and Rosamond, M.C. and Gallant, A.J. and Petty, M.C. and Al Ghaferi, A. and Ayesh, A. and Ashall, D. and Mabrook, M.F. and Zeze, D.A. (2011) Single-walled nanotube MIS memory devices. In: Nanotechnology (IEEE-NANO), 11th IEEE Conference, Portland OR., 15-18 August, 2011.

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Abstract

Single-Walled carbon nanotubes (SWCNTs) were embedded in hybrid Metal-Insulator-Semiconductor (MIS) memory devices using layer-by-layer (LbL) deposition with polymethylmethacrylate (PMMA) as an organic insulator. It is demonstrated that shortened SWCNTs lead to reliable and large memory windows by virtue of better encapsulation which reduces charge leakage compared with longer SWCNT devices. The capacitance-voltage (C-V) characteristics exhibit a clockwise hysteresis, indicative of electron injection into the SWCNT charge storage elements through the PMMA layer. It is also shown that devices made using sodium dodecyl sulphate (SDS)-based SWCNTs and polyethyleneimine (PEI) produce memory windows larger than 6 V, have a high charge retention of 76% and a storage density better than 2�1012/cm2.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 08 Jul 2015 02:49
Last Modified: 23 Sep 2015 03:20
ISSN: 1944-9399
URI: http://e.bangor.ac.uk/id/eprint/4732
Identification Number: DOI: 10.1109/NANO.2011.6144530
Publisher: IEEE publishing
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