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Enhanced performance of AlOx-based organic thin-film transistors

Ashall, D. and Fakher, S.J. and Mabrook, M.F. (2011) Enhanced performance of AlOx-based organic thin-film transistors. In: Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference, Portland OR., 15-18 August, 2011.

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Abstract

The performance of thin-film transistors based on an aluminum oxide gate dielectric and a pentacene semiconductor have been systematically enhanced by modification of the oxide surface. The oxide layer was formed at room temperature using a standard anodization technique. The effects of surface modification of the oxide layer on device performance have been investigated. Higher mobility transistors were fabricated by passivating the oxide layer with a self-assembled molecular monolayer of an alkyl phosphonic acid or a spin-coated acrylic film. In both cases the normalized sub-threshold swing was reduced by a factor of 1.9 and 1.5, and the maximum charge-carrier mobility was increased by one and two orders of magnitudes respectively. The much increased mobility for transistors modified by a thin film of polymethylmethacrylate (PMMA) is attributed to the larger pentacene grain size.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 04 Jul 2015 02:19
Last Modified: 23 Sep 2015 03:20
ISSN: 1944-9399
URI: http://e.bangor.ac.uk/id/eprint/4727
Identification Number: DOI: 10.1109/NANO.2011.6144540
Publisher: IEEE publishing
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