Improved memory behaviour of single-walled carbon nanotubes charge storage nodes

Alba-Martin, M. and Firmager, T. and Atherton, J. and Rosamond, M.C. and Ashall, D. and Al Ghaferi, A. and Ayesh, A. and Gallant, A.J. and Mabrook, M.F. and Petty, M.C. and Zeze, D.A. (2012) Improved memory behaviour of single-walled carbon nanotubes charge storage nodes. Journal of Physics D: Applied Physics, 45 (29). p. 295401. DOI: 10.1088/0022-3727/45/29/295401

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To investigate their memory behaviours, single-walled carbon nanotubes (SWCNTs) were embedded in the floating gate of a hybrid metal�insulator�semiconductor structure using layer-by-layer deposition, and polymethylmethacrylate (PMMA) as the dielectric. Unlike longer SWCNT-based structures, shortened SWCNTs were shown to exhibit reliable and large memory windows by virtue of a better encapsulation which reduces charge leakage. The capacitance�voltage characteristics of the devices were consistent with electron injection into the SWCNT charge storage elements (in the floating) from the top electrode through the PMMA, using localized defects and crossing the PMMA energy barrier. In terms of material formulation, a combination of SWCNTs dispersed in sodium dodecyl sulfate and polyethyleneimine used as charge storage elements in the floating gate was shown to lead to repeatable and reliable memory characteristics. Fast switching and very large memory windows (~7 V) exhibiting high charge density (2.6 � 1012 cm�2) and charge retention in excess of ~76% were achieved under a ±10 V sweep voltage range. These results suggest that SWCNTs could lead to improved memory behaviour with the potential for application in plastic electronics.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 04 Jul 2015 02:18
Last Modified: 23 Sep 2015 03:12
ISSN: 0022-3727
URI: http://e.bangor.ac.uk/id/eprint/4723
Identification Number: DOI: 10.1088/0022-3727/45/29/295401
Publisher: IOP Publishing
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