Electrical characteristics of hybrid-organic memory devices based on Au nanoparticles

Nejm, R.R. and Ayesh, A.I. and Zeze, D.A. and Sleiman, A. and Mabrook, M.F. and Al-Ghaferi, A. and Hussein, M. (2015) Electrical characteristics of hybrid-organic memory devices based on Au nanoparticles. Journal of Electronic Materials, 44 (8). pp. 2835-2841. DOI: 10.1007/s11664-015-3692-x

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We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal�insulator�semiconductor structure. Au nanoparticles were produced by sputtering and inertgas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO2)/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance�voltage (C�V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 04 Jul 2015 02:16
Last Modified: 23 Sep 2015 02:48
ISSN: 0361-5235
URI: http://e.bangor.ac.uk/id/eprint/4713
Identification Number: DOI: 10.1007/s11664-015-3692-x
Publisher: Springer
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