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IR Sensor Based on Low Bandgap Organic Photodiode With Up-Converting Phosphor

Kettle, J. and Chang, S.W. and Horie, M. (2015) IR Sensor Based on Low Bandgap Organic Photodiode With Up-Converting Phosphor. IEEE Sensors Journal, 15 (6). 3221 - 3224. DOI: 10.1109/JSEN.2015.2394744

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Abstract

We report an infrared (IR) sensor which is fabricated by integrating a PCPDTBT:PCBM organic photodiode (OPD) with an up-converting (UC) phosphor. The UC phosphor extends the response range by absorbing incoming light with a wavelength of 986 nm and re-emitting at 804 nm, which is a wavelength that can be absorbed by the active layer, resulting in a generation of a photocurrent. In order to ensure low reverse bias leakage current, PEDOT:PSS was not used as a hole transporting layer, which reduced reverse leakage current by two orders of magnitude compared with conventional hole transporting layers. An IR-emitting laser diode (with emission at 986 nm) is used as a light source to illuminate the sensor. The results demonstrate the proof of principle of sensing using polymer-based OPDs in the near-IR, with wider applications possible in areas, such as telecommunications or sensors if different UC phosphors are applied.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 19 Jun 2015 02:44
Last Modified: 23 Sep 2015 02:50
ISSN: 1530-437X
Publisher's Statement: (c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
URI: http://e.bangor.ac.uk/id/eprint/4660
Identification Number: DOI: 10.1109/JSEN.2015.2394744
Publisher: IEEE publishing
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