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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures

Kalbitz, R. and Frubing, P. and Gerhard, R. and Taylor, D.M. (2011) Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures. Applied Physics Letters, 98 ((3)). 033303. DOI: 10.1063/1.3543632

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Abstract

Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 17:10
Last Modified: 23 Sep 2015 03:26
ISSN: 0003-6951
URI: http://e.bangor.ac.uk/id/eprint/2275
Identification Number: DOI: 10.1063/1.3543632
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