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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman, A. and Rosamond, M.C. and Martin, M.A. and Ayesh, A. and Al Ghaferi, A. and Gallant, A.J. and Mabrook, M.F. and Zeze, D.A. (2012) Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters, 100 ((2)). DOI: 10.1063/1.3675856

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Abstract

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6�V memory window at�±�30�V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (�9.15���1011�cm�2) and demonstrated 94% charge retention due to the superior encapsulation.

Item Type: Article
Subjects: Research Publications
Departments: College of Physical and Applied Sciences > School of Electronic Engineering
Date Deposited: 09 Dec 2014 16:56
Last Modified: 23 Sep 2015 03:16
ISSN: 0003-6951
URI: http://e.bangor.ac.uk/id/eprint/1503
Identification Number: DOI: 10.1063/1.3675856
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